• Nanosponge Synonyms:

elastic nanosponges, nanosponge, nanoparticle abrasive slurries, CMP nano abrasive slurries, slurry, abrasive, cmp,

• Nanosponge Chemical Formulas:

TBA

• Nanosponge Description: 

a) Soft elastic nanosponges are sub-micron-sized silica particles (50 nm to 200 nm) that possess nano-sized pores (5 Å to 50 Å) comprising up to 60% of their volume, which transform hard and brittle silica particles into soft and rubber-like particles. The elastic nanosponges also exhibit a unique non-stick behavior on surfaces and remain buoyant and extremely well-dispersed when suspended in liquid solutions. 

b) Due to high surface area, the nanosponges contain a high density of surface groups which, in an aqueous environment, can react with other surfaces during the rubbing or polishing process. These properties make nanosponges ideal in semiconductor manufacturing to produce defect-free ultra-low k dielectrics-based interconnects for next-generation electronics

• Nanosponge Typical Chemical Properties Available:
  
        Silica particles
  

• Nanosponge Typical Physical Properties Available:

Sub-micron-sized silica particles (50 nm to 200 nm) that possess nano-sized pores (5 Å to 50 Å) comprising up to 60% of their volume, which transform hard and brittle silica particles into soft and rubber-like particles.

• Nanosponge Nominal Physical Constants: TBA

• Nanosponge Typical Applications:

a) An ideal CMP process should provide high wafer throughput, low defects, high planarity and a large robust processing window. Chemical-mechanical planarization (CMP, also called chemical-mechanical polishing) combines the chemical removal effect of an acidic or basic fluid solution with the mechanical effect of polishing with an abrasive material. The current state of the art copper CMP process is a complicated 3 step CMP process to meet the planarity and defect metrics of the industry.

b) During polishing, these processes create high stresses which are not compatible with the introduction of fragile low dielectric materials being introduced by the semiconductor industry. To address these challenges, SinMat Inc has developed a novel “soft polishing layer” concept for gentle removal of copper without damaging fragile low K dielectric materials. The compatible chemistries and use of nanoparticles in the slurry allows successful development of a flexible defect-free single step process to fabricate copper based interconnects.

c) Using proprietary chemistries and nanoparticles, nanosponge based abrasive chemical slurries polish copper and low dieletric constant materials in a uniquely soft and gentle manner. The unique chemistries result in a single step gentle process to fabricate next generation copper based interconnects, which is in contrast to the three step process presently adopted in the industry. Nanosponge abrasive slurries render substantially higher performance, and throughput, while simplifying the integration process, thereby possibly resulting in over 50 % reduction in CMP related manufacturing costs.

• Nanosponge Typical Packaging:

Varies

• Nanosponge TSCA (SARA Title III) Status:

Listed- ?

• Nanosponge Product Premanufacture Notice (PMN):

  Nanosponge products from READE are to be used for R&D testing only.
  

• Nanosponge CAS Number:

TBA

• Nanosponge RTECS Number:

TBA