• Gallium Arsenide Synonyms:

gallium arsenide (GaAs), gallium monoarsenide (GaAs), gallanylidynearsane, galliumarsenide(gaas), galliummonoarsenide, CAS# 1303-00-0, gallium arsenide pieces, gallium arsenide, 99.999% (metals basis), arsinidynegallium, gallium arsenide wafer, gallium arsenide (99.9999% Ga) puratrem 25mm and down polycrystalline pieces, galliumarsenidemmanddownpolycrystallinepieces, GALLIUM ARSENIDE, SINGLE CRYSTAL SUBSTR, Gallium arsenide, pieces, 99.999% metals basis, Galliumarsenide(99.9999%-Ga) puratrem, GALLIUM ARSENIDE: (99.9999% GA) PURATREMECES, GALLIUM ARSENIDE WAFER - 51MM,

• Gallium Arsenide Designations:

Chemical Name: Gallium arsenide

Chemical Formula: GaAs

• Gallium Arsenide Description:

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an important III/V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, e.g., monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows

• Gallium Arsenide Chemical Properties Available:

Typical= 99.99% up to 99.999999%

• Gallium Arsenide Physical Properties Available:

Splatter, ingot. wafer, pieces

• Gallium Arsenide Nominal Physical Constants:

1) GaAs has some electronic properties which are superior to those of silicon. It has a higher saturated electron velocity and higher electron mobility, allowing transistors made from it to function at frequencies in excess of 250 GHz. Unlike silicon cells, GaAs cells are relatively insensitive to heat.

2) Also, GaAs devices generate less noise than silicon devices when operated at high frequencies. They can also be operated at higher power levels than the equivalent silicon device because they have higher breakdown voltages. These properties recommend GaAs circuitry in mobile phones, satellite communications, microwave point-to-point links, and some radar systems.

3) It is used in the manufacture of Gunn diodes for generation of microwaves.

4) Another advantage of GaAs is that it has a direct band gap, which means that it can be used to emit light efficiently.

5) Solar cells and detectors- Another important and growing application of GaAs is for high efficiency solar cells. Gallium arsenide (GaAs) is also known as single-crystalline thin film and are high cost high efficiency solar cells.

6) In 1970, the first GaAs heterostructure solar cells were created by the team led by Zhores Alferov in the USSR.[9][10][11] In the early 1980s, the efficiency of the best GaAs solar cells surpassed that of silicon solar cells, and in the 1990s GaAs solar cells took over from silicon as the cell type most commonly used for Photovoltaic arrays for satellite applications. Later, dual- and triple-junction solar cells based on GaAs with germanium and indium gallium phosphide layers were developed as the basis of a triple junction solar cell which held a record efficiency of over 32% and can operate also with light as concentrated as 2,000 suns. This kind of solar cell powers the rovers Spirit and Opportunity, which are exploring Mars' surface.

7) Also many solar cars utilize GaAs in solar arrays.

8) GaAs diodes can be used for the detection of X-rays.[12]

9) Light emission devices- GaAs has been used to produce (near-infrared) laser diodes since 1962.

10) GaAs is often used a substrate material for the epitaxial growth of other III-V semiconductors including: InGaAs and GaInNAs. 

• Gallium Arsenide Packaging Options:

Jars, pails, drums. For further information on packaging options contact READE

• Gallium Arsenide TSCA (SARA Title III) Status:

Listed. For further information please call the E.P.A. at +1.202.554.1404

• Gallium Arsenide Chemical Abstract Service Number:

CAS# 1303-00-0

• Gallium Arsenide RTECS Number:

LW8800000