• Sputtering Target Synonyms:

sputter target, PVD, CVD, sputtering target, electron beam, sputter deposition, chemical etching, ion etching, ion milling, ion sputtering, chemical sputtering, electronic sputtering, potential sputtering, physical sputtering, reactive sputtering, magnetron sputtering, diode sputtering, confocal sputtering, direct sputtering, hot pressed target, vacum remelted target, physical vapor deposition, chemical vapor deposition, sputtering target pieces, sputtering target pellets, sputtering target slugs, sputtering targets target, sputtering target foil, sputtering target sheet, sputtering target plate, sputtering target rod,

• Sputtering Target Designations:

electron beam, sputter deposition, chemical etching, ion etching, ion milling, ion sputtering, chemical sputtering, electronic sputtering, potential sputtering, physical sputtering, reactive sputtering, magnetron sputtering, diode sputtering, confocal sputtering, direct sputtering, hot pressed target, vacum remelted target, physical vapor deposition and chemical vapor deposition

• Sputtering Target Description:
  
  
  1) Sputtering is a physical process whereby atoms in a solid target material are ejected into the gas phase due to bombardment of the material by energetic ions. It is commonly used for thin-film deposition, as well as analytical techniques.
  
  2) Sputtering is largely driven by momentum exchange between the ions and atoms in the material, due to collisions. The process can be thought of as atomic billiards, with the ion (cue ball) striking a large cluster of close-packed atoms (billiard balls). Although the first collision pushes atoms deeper into the cluster, subsequent collisions between the atoms can result in some of the atoms near the surface being ejected away from the cluster. The number of atoms ejected from the surface per incident ion is called the sputter yield and is an important measure of the efficiency of the sputtering process.
  
  3) Other things the sputter yield depends on are the energy of the incident ions, the masses of the ions and target atoms, and the binding energy of atoms in the solid.The ions for the sputtering process are supplied by a plasma that is induced in the sputtering equipment. In practice a variety of techniques are used to modify the plasma properties, especially ion density, to achieve the optimum sputtering conditions, including usage of RF (radio frequency) alternating current, utilization of magnetic fields, and application of a bias voltage to the target.

• Sputtering Target Chemical Properties Available:

1) Metal (high purity- 99% to 99.9999%) to customer specification

2) Alloy (specialty custom fabricated) to customer specification

3) Compounds (oxides, nitrides, borides, sulfides, selenides, tellurides, carbides, crystalline and composite mixtures) to customer specification.

• Sputtering Target Physical Properties Available:

Pieces, pellets, slugs, target, foil, sheet, plate and rod to customer specification

• Sputtering Target Typical Applications and Outlook:

1) Film deposition, etching and analytical techniques

2) The global market for sputtered films and sputtering targets is estimated to reach $3.3 billion in 2011 and $5.9 billion by 2016 at a compound annual growth rate (CAGR) of 12.3% between 2011 and 2016. Source: BCC

• Sputtering Target Packaging:

 To customer specification

• Sputtering Target TSCA (SARA Title III) Status:

Varies. For further information please call the E.P.A. at +1-202-554-1404