• Nanosponge Abrasives Synonyms:

nanosponge abrasives, nanoparticle abrasive slurries, CMP nano abrasive slurries, slurry, cmp, abrasive

• Nanosponge Abrasives Description:

Using proprietary chemistries and nanoparticles, nanosponge based abrasive chemical slurries polish copper and low dieletric constant materials in a uniquely soft and gentle manner. The unique chemistries result in a single step gentle process to  fabricate  next generation copper based interconnects, which is in contrast to the three step process presently adopted in the industry. Nanosponge abrasive slurries render substantially higher performance, and throughput, while simplifying the integration process, thereby possibly resulting in over 50 % reduction in CMP related manufacturing costs.

• Nanosponge Abrasives Typical Chemical Properties Available:
  

Varies

• Nanosponge Abrasives Typical Physical Properties Available:

Particles, slurries

• Nanosponge Abrasives Typical Applications:

 1) Using proprietary chemistries and nanoparticles, nanosponge based abrasive chemical slurries polish copper and low dieletric constant materials in a uniquely soft and gentle manner. The unique chemistries result in a single step gentle process to fabricate next generation copper based interconnects, which is in contrast to the three step process presently adopted in the industry. Nanosponge abrasive slurries render substantially higher performance, and throughput, while simplifying the integration process, thereby possibly resulting in over 50 % reduction in CMP related manufacturing costs.

2) An ideal CMP process should provide high wafer throughput, low defects, high planarity and a large robust processing window. Chemical-mechanical planarization (CMP, also called chemical-mechanical polishing) combines the chemical removal effect of an acidic or basic fluid solution with the mechanical effect of polishing with an abrasive material. The current state of the art copper CMP process is a complicated 3 step CMP process to meet the planarity and defect metrics of the industry. During polishing, these processes create high stresses which are not compatible with the introduction of fragile low dielectric materials being introduced by the semiconductor industry.

3) The compatible chemistries and use of nanoparticles in the slurry allows successful development of a flexible defect-free single step process to fabricate copper based interconnects.

• Nanosponge Abrasives Typical Packaging:

Varies

• Nanosponge Abrasives TSCA (SARA Title III) Status:

Listed.

• Nanosponge Abrasives Premanufacture Notice (PMN):

Nanosponge abrasives from READE are to be used for R&D use only.

• Nanosponge Abrasives CAS Number:

TBA

• Nanosponge RTECS Number:

TBA