• Strained Silicon (Si) Synonyms:

(s-si), strained silicon layer, strained Si, Si/strained Si, strained silicon in nanoscale, strained-single-crystal silicon, strained-Si, high-speed strained silicon,   strained Si, Si/strained Si, semiconductors,

• Strained Silicon (Si) Designations:

Chemical Name: Strained silicon

• Strained Silicon (Si) General Description:

a) This new technology takes advantage of the natural tendency for atoms inside compounds to align with one another.

b) Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance.

c) This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strained silicon. Moving these silicon atoms farther apart reduces the atomic forces that interfere with the movement of electrons through the transistors and thus better mobility, resulting in better chip performance and lower energy consumption. These electrons can move 70% faster allowing strained silicon transistors to switch 35% faster.

d) More recent advances include deposition of strained silicon using metalorganic vapor phase epitaxy (MOVPE) with metalorganics as starting sources, e.g. silicon sources (silane and dichlorosilane) and germanium sources (germane, germanium tetrachloride, and isobutylgermane). Source: Wikipedia

• Strained Silicon (Si) Typical Chemical Properties Available:

TBA

• Strained Silicon (Si) Physical Properties Available:

TBA

• Strained Silicon (Si) Typical Applications:

a) IBM claims the strained silicon process is not expensive or difficult to work into production lines.

b) More recent advances include deposition of strained silicon using metalorganic vapor phase epitaxy (MOVPE) with metalorganics as starting sources, e.g. silicon sources (silane and dichlorosilane) and germanium sources (germane, germanium tetrachloride, and isobutylgermane).

• Strained Silicon (Si) Packaging Options:

Usually to customer specification

• Strained Silicon (Si) TSCA (SARA Title III) Status:

Listed. For further information please call the E.P.A. at +1.202-554-1404

• Strained Silicon (Si) Chemical Abstract Service Number:

Unknown