• Aluminum Nitride (AlN) Synonyms:

aluminum nitride, AlN, aluminium(III) nitride, aluminum nitride powder, aluminum nitride crystal, aluminum nitride rod, aluminum nitride target, aluminum nitride piece, CAS # 24304-00-5, ALN A, ALN AT, ALN B, ALN C, aluminumnitride(AlN), aluminum nitride nanopowder, aluminumnitride, aluminum nitride powders, aluminium nitride, aluminumnitrideagglomeratedpowder, aluminumnitrideagglomeratedpowderhighpurity, aluminumnitridedeglomeratedpowder,

• Aluminum Nitride Formulas:
  
        a) AlN

b) Hill  System= Al₁N₁

• Aluminum Nitride Description:

It is stated that AlN has 10-15 times greater thermal conductivity, 50-75% greater bending strength, and a coefficient of thermal expansion more closely matching that of silicon. A light tan/ white to gray powder which can be fired to translucence

• Aluminum Nitride Typical Chemical Properties Available:

a) Typical chemistry: N= 33.6% min., Al= 65.4% min. Purities are available from 99% (industrial grade) to 99.8% (high purity grade).

b) Three different basic AlN chemistries are available

• Aluminum Nitride Typical Physical Properties Available:

a) Single crystals, sintered pieces, rods, targets, pellets, whiskers, grinding media, coarse grains for fillers, and fine powder

b) Granules and powder are available from as coarse as 60 mesh (250 microns) and finer down to a 0.5 micron product. The finest commercial grade available in tonnage lots has an average agglomerated particle size of approximately 1.8 microns.

c) Other standard AlN grades available have a D₅₀ Micron Particle Size of 3-6, 7-10, 11-15 and 14-23 

• Aluminum Nitride Nominal Physical Constants:

•  Aluminum Nitride Typical Applications:

a) High thermally conductive ceramics, translucent ceramics, Si-Al-O-N compounds, high temperature materials, additives, heat sinks, power and multichip modules, refractories, ceramic armor, break rings, coatings, insulators, heat radiation plates, optoelectronic devices, metal matrix composites, thermally conductive filler, IC packages and substrates.

b) For use in opto-electronics, dielectric layers in optical storage media, electronic substrates, chip carriers where high thermal conductivity is essential, military applications, as a crucible to grow crystals of gallium arsenide, steel and semiconductor manufacturing.

c) Epitaxially grown thin film crystalline aluminium nitride is also used for surface acoustic wave sensors (SAW's) deposited on silicon wafers because of the AlN's piezoelectric properties. One application is an RF filter used in mobile phones called a thin film bulk acoustic resonator (FBAR). This is a MEMS device that uses aluminium nitride sandwiched between two metal layers. 

• Aluminum Nitride Typical Packaging:

50 lbs. bags, poly-lined fiber drums and bulk bags

• Aluminum Nitride TSCA (SARA Title III) Status:

1) Listed on the TSCA inventory

• Aluminum Nitride CAS Number:

CAS# 24304-00-5

• Aluminum Nitride UN Number:  

1759 and 3132

• Aluminum Nitride RTECS Number:

246-140-8

• NFPA Rating (Estimated):

 Health: 1; Flammability: 0; Instability: 0