indium phosphide, indium (III) phosphide, InP, crystalline, lump, pieces, 22398-80-7, indium phosphide, indium (III) phosphide, InP, crystalline, lump, pieces, 22398-80-7

 

Reade Advanced Materials offers:

Indium Phosphide 

 

InP

Indium Phosphide (InP) is a member of the III-V family of semiconductors. III-V materials are binary crystals with one element from the metallic group 3 of the periodic table, and one from the non-metallic group 5.Some of these binary
compounds are known for their high mobility of electrons and holes, which in the case of the best known example - gallium arsenide - facilitates the operation of very high speed electronics. 

III-V compounds have a cubic lattice-like structure with atoms in each corner. InP, for example, features alternate indium and phosphorous atoms. Being a semiconductor, InP has an energy bandgap, which makes it opaque for light energy that is higher than the bandgap, and transparent
for light energy levels that are below. 

A family of materials - including InGaAs and InGaAsP - share the same 5.87Å lattice constant as InP, allowing epitaxial processing on top of the basic InP wafer.

One of the key advantages of InP is device size. Because the refractive indices of InP and its ternary (InGaAs) and quaternary (InGaAsP) derivatives are relatively higher than for other optical materials, bends can be made much sharper and smaller. 

 InP processing complexity compares favorably with commodity silicon chips, with under 16 stages of photolithography. 

As a semiconductor, InP has a very strong potential for creating integrated devices. 

99.99% and 99.9999%

6.35 mm x down lumps, crystalline pieces, wafers and substrates

Varies

indium phosphide, indium (III) phosphide, InP, crystalline, lump, pieces, 22398-80-7, indium phosphide, indium (III) phosphide, InP, crystalline, lump, pieces, 22398-80-7

1) InP has been a focus of development since the early 1980s, and today the material is being used as a platform for a wide variety of fiber communications components, including lasers, LEDs, semiconductor optical amplifiers, modulators and photo-detectors.

2) InP applications for discrete active devices are widespread in communications networking, making it the natural starting place for wholesale integration of passive devices for a complete system on a chip. As a semiconductor material, InP can provide all-in-one integrated functionality that includes light generation, detection, amplification, high- speed modulation and switching, as well as passive splitting, combining and routing. The same material can be used to make high-speed modulators, switches, amplifiers and detectors, or just passive wave guides for interconnecting these diverse devices.

Usually to customer specification

Yes. For further information please call the E.P.A. at 1.202.554.1404

22398-80-7

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