• Designations:

Chemical Name: Strained silicon

• General Description:

This new technology takes advantage of the natural tendency for atoms inside compounds to align with one another. When silicon is deposited on top of a substrate with atoms spaced farther apart, the atoms in silicon stretch to line up with the atoms beneath, stretching -- or "straining" -- the silicon. In the strained silicon, electrons experience less resistance and flow up to 70 percent faster, which can lead to chips that are up to 35 percent faster -- without having to shrink the size of transistors. 

• Typical Chemical Properties Available:

TBA

• Physical Properties Available:

TBA

• Nominal Physical Constants:

• Typical Applications:

IBM claims the strained silicon process is not expensive or difficult to work into production lines, and said it could be used commercially as soon as 2003. 

• Packaging Options:

Usually to customer specification

• TSCA (SARA Title III) Status:

Listed. For further information please call the E.P.A. at +1.202-554-1404

• Chemical Abstract Service Number:

• UN number: